ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.980
EU - Europa 1.491
AS - Asia 1.184
SA - Sud America 102
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 4.772
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Nazione #
US - Stati Uniti d'America 1.950
CN - Cina 527
DE - Germania 373
SG - Singapore 300
GB - Regno Unito 282
PL - Polonia 267
SE - Svezia 251
HK - Hong Kong 146
RU - Federazione Russa 117
BR - Brasile 82
VN - Vietnam 74
KR - Corea 72
UA - Ucraina 56
IT - Italia 35
TR - Turchia 31
LT - Lituania 21
BG - Bulgaria 20
CA - Canada 18
IE - Irlanda 18
NL - Olanda 18
FI - Finlandia 13
MX - Messico 11
AR - Argentina 10
BD - Bangladesh 10
ID - Indonesia 6
ZA - Sudafrica 6
ES - Italia 4
FR - Francia 4
JP - Giappone 4
EG - Egitto 3
PK - Pakistan 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BO - Bolivia 2
CL - Cile 2
GR - Grecia 2
IN - India 2
IQ - Iraq 2
MA - Marocco 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CO - Colombia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
ML - Mali 1
NO - Norvegia 1
OM - Oman 1
PE - Perù 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.772
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Città #
Hefei 284
Warsaw 267
Santa Clara 240
Fairfield 206
Southend 203
Ashburn 180
Singapore 176
Hong Kong 146
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 88
Beijing 86
Houston 83
Seattle 77
Seoul 72
Cambridge 64
Wilmington 55
London 47
Eugene 36
Ann Arbor 30
Izmir 29
Los Angeles 27
The Dalles 27
Ho Chi Minh City 25
Columbus 23
San Diego 23
Princeton 21
Kent 20
Sofia 20
Hanoi 19
Amsterdam 18
Dublin 18
New York 17
Chicago 15
Moscow 14
Bremen 12
Dallas 12
Helsinki 11
Montreal 10
Brooklyn 9
Buffalo 9
Redondo Beach 8
Salt Lake City 8
Grafing 7
Denver 6
Nanjing 6
São Paulo 6
Haiphong 5
Querétaro 5
San Michele All'adige 5
Shanghai 5
Council Bluffs 4
Da Nang 4
Hangzhou 4
Johannesburg 4
Mexico City 4
Phoenix 4
Tokyo 4
Atlanta 3
Norfolk 3
Nuremberg 3
Poplar 3
Rio de Janeiro 3
Tampa 3
Vancouver 3
Biên Hòa 2
Boardman 2
Boston 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Curitiba 2
Detroit 2
Dhaka 2
Esmeraldas 2
Foz do Iguaçu 2
Frankfurt am Main 2
Guangzhou 2
Hackensack 2
Hounslow 2
Karachi 2
Kilburn 2
Moses Lake 2
Munich 2
Orem 2
Porto Alegre 2
Pottstown 2
Prescot 2
Quận Một 2
San Francisco 2
Santiago 2
Sterling 2
Stockholm 2
Tolmezzo 2
Uberlândia 2
Alvarado 1
Totale 3.352
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 542
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 287
Impact Ionization and Photon Emission in MOS Capacitors and FETs 270
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 261
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 260
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 251
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 245
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 240
Well-tempered MOSFETs: 1D versus 2D quantum analysis 237
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 237
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 229
Device simulation for decananometer MOSFETs 227
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 199
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 192
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 185
Tunnelling Injection in Thin Oxide MOS Capacitors 183
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 182
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 176
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 153
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 133
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 105
Totale 4.794
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Categoria #
all - tutte 16.756
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.756
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021200 0 0 0 0 0 21 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20261.292 146 118 197 193 320 318 0 0 0 0 0 0
Totale 4.794