statistiche ricercatore

Continente	#
NA - Nord America	1.714
AS - Asia	592
EU - Europa	578
SA - Sud America	82
AF - Africa	11
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	2.979

Nazione	#
US - Stati Uniti d'America	1.698
CN - Cina	188
SG - Singapore	181
GB - Regno Unito	174
HK - Hong Kong	103
IT - Italia	93
DE - Germania	80
BR - Brasile	60
SE - Svezia	57
RU - Federazione Russa	40
UA - Ucraina	33
FI - Finlandia	32
VN - Vietnam	32
TR - Turchia	28
FR - Francia	15
AR - Argentina	14
BG - Bulgaria	14
KR - Corea	14
CA - Canada	12
IN - India	9
PT - Portogallo	9
JP - Giappone	7
ZA - Sudafrica	6
ID - Indonesia	5
NL - Olanda	5
BD - Bangladesh	4
IR - Iran	4
AT - Austria	3
BE - Belgio	3
CH - Svizzera	3
IE - Irlanda	3
CO - Colombia	2
EC - Ecuador	2
EG - Egitto	2
ES - Italia	2
LT - Lituania	2
PE - Perù	2
PL - Polonia	2
TW - Taiwan	2
UZ - Uzbekistan	2
AD - Andorra	1
AL - Albania	1
AM - Armenia	1
AU - Australia	1
AZ - Azerbaigian	1
BH - Bahrain	1
CI - Costa d'Avorio	1
CR - Costa Rica	1
CW - ???statistics.table.value.countryCode.CW???	1
CY - Cipro	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
GT - Guatemala	1
IM - Isola di Man	1
IQ - Iraq	1
JO - Giordania	1
KG - Kirghizistan	1
KW - Kuwait	1
KZ - Kazakistan	1
LK - Sri Lanka	1
LU - Lussemburgo	1
MA - Marocco	1
MD - Moldavia	1
MX - Messico	1
PK - Pakistan	1
RO - Romania	1
SA - Arabia Saudita	1
SN - Senegal	1
TH - Thailandia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
VE - Venezuela	1
Totale	2.979

Nome	#
Combined Effects of LED Lights and chicken manure on Neochloris oleoabundans Growth	418
Progresses in Modeling HfOx RRAM Operations and Variability	287
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries	265
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM	261
A Novel Electronic Nose as Adaptable Device to Judge Microbiological Quality and Safety in Foodstuff	257
Microscopic understanding and modeling of HfO2 RRAM device physics	230
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching	229
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application	222
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling	213
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs	205
Controlling Uniformity of RRAM Characteristics via the Forming Process	162
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices	141
Controlling uniformity of RRAM characteristics through the forming process	118
Totale	3.008

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	200	0	0	0	0	0	25	21	36	22	43	28	25
2021/2022	305	52	18	17	14	3	28	11	18	21	37	60	26
2022/2023	266	24	46	18	27	26	48	2	35	21	2	11	6
2023/2024	181	6	12	8	20	47	28	23	19	0	4	1	13
2024/2025	600	36	6	4	42	110	78	35	44	64	21	64	96
2025/2026	466	58	27	73	73	204	31	0	0	0	0	0	0
Totale													3.008