VANDELLI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 5.118
EU - Europa 2.266
AS - Asia 1.762
SA - Sud America 225
AF - Africa 25
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 3
Totale 9.408
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Nazione #
US - Stati Uniti d'America 5.079
PL - Polonia 665
GB - Regno Unito 535
SG - Singapore 532
CN - Cina 523
HK - Hong Kong 333
IT - Italia 231
SE - Svezia 187
BR - Brasile 175
DE - Germania 157
RU - Federazione Russa 105
UA - Ucraina 104
TR - Turchia 97
VN - Vietnam 93
FI - Finlandia 86
KR - Corea 53
BG - Bulgaria 41
FR - Francia 40
PT - Portogallo 37
IN - India 34
CA - Canada 28
ES - Italia 25
NL - Olanda 18
AR - Argentina 15
IR - Iran 14
EC - Ecuador 13
ID - Indonesia 12
ZA - Sudafrica 12
BD - Bangladesh 11
TW - Taiwan 11
IE - Irlanda 10
JP - Giappone 8
CO - Colombia 7
EU - Europa 6
IQ - Iraq 6
MX - Messico 6
IL - Israele 5
KZ - Kazakistan 5
MA - Marocco 5
CH - Svizzera 4
LT - Lituania 4
PK - Pakistan 4
UY - Uruguay 4
AU - Australia 3
AZ - Azerbaigian 3
CL - Cile 3
JO - Giordania 3
PE - Perù 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BB - Barbados 2
BE - Belgio 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
HU - Ungheria 2
KE - Kenya 2
KG - Kirghizistan 2
MY - Malesia 2
NP - Nepal 2
OM - Oman 2
PY - Paraguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AL - Albania 1
AT - Austria 1
CY - Cipro 1
DK - Danimarca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
GE - Georgia 1
GP - Guadalupe 1
JM - Giamaica 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NG - Nigeria 1
RE - Reunion 1
SA - Arabia Saudita 1
SI - Slovenia 1
TN - Tunisia 1
VE - Venezuela 1
Totale 9.408
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Città #
Warsaw 664
Fairfield 648
Santa Clara 469
Ashburn 440
Woodbridge 394
Southend 388
Singapore 343
Hong Kong 324
Chandler 299
Houston 271
Seattle 257
Ann Arbor 218
Wilmington 215
Jacksonville 187
Cambridge 182
Dearborn 178
Hefei 157
Nyköping 133
Modena 122
London 108
Beijing 91
Los Angeles 67
Izmir 64
San Diego 64
Council Bluffs 59
Chicago 48
Helsinki 43
Princeton 41
Sofia 39
Ho Chi Minh City 38
Eugene 37
Seoul 36
New York 35
Moscow 32
The Dalles 27
Buffalo 25
Redwood City 24
Frankfurt am Main 23
Hanoi 23
Munich 22
Girona 18
São Paulo 18
Shanghai 17
Des Moines 16
Grafing 14
Falls Church 13
Salt Lake City 12
Columbus 11
Dallas 11
Boardman 10
Atlanta 9
Norwalk 9
Wuhan 9
Ardabil 8
Augusta 8
Belo Horizonte 8
Bremen 8
Dongguan 8
Dublin 8
Milan 8
Saint Petersburg 8
San Mateo 8
Taipei 8
Toronto 8
Turku 8
Elk Grove Village 7
Johannesburg 7
Montreal 7
New Delhi 7
Phoenix 7
Rio de Janeiro 7
San Francisco 7
Brasília 6
Brooklyn 6
Guiyang 6
Prescot 6
Stanford 6
Stockholm 6
Tampa 6
Tokyo 6
Varallo 6
Zhengzhou 6
Ankara 5
Baghdad 5
Boston 5
Jodhpur 5
Ottawa 5
Quito 5
Thái Nguyên 5
Verona 5
Almaty 4
Amsterdam 4
Badalona 4
Bologna 4
Calgary 4
Chengdu 4
Chennai 4
Denver 4
Detroit 4
Frontone 4
Totale 7.287
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Nome #
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 636
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 569
A microscopic physical description of RTN current fluctuations in HfOx RRAM 326
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 312
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 297
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 295
Progresses in Modeling HfOx RRAM Operations and Variability 287
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 267
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 265
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 263
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 261
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 260
A simulation framework for modeling charge transport and degradation in high-k stacks 247
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 244
Grain boundary-driven leakage path formation in HfO2 dielectrics 241
Microscopic understanding and modeling of HfO2 RRAM device physics 230
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 229
Metal oxide resistive memory switching mechanism based on conductive filament properties 229
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 228
Connecting the physical and electrical properties of Hafnia-based RRAM 228
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 219
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 218
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 210
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 210
Random telegraph noise (RTN) in scaled RRAM devices 209
Modeling of the forming operation in HfO2-base resistive switching memories 208
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 208
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 206
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 203
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 197
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling 194
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 189
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 187
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 184
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 180
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 162
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 160
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 141
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability 79
Totale 9.478
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Categoria #
all - tutte 34.817
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.817
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021639 0 0 0 0 0 77 81 146 72 121 81 61
2021/2022784 36 104 74 31 9 52 44 38 97 62 172 65
2022/2023714 54 84 62 59 94 134 4 88 92 4 22 17
2023/2024490 12 38 35 59 116 61 24 65 5 7 24 44
2024/20251.847 102 14 18 136 324 244 164 145 169 62 207 262
2025/20261.961 201 122 231 225 455 727 0 0 0 0 0 0
Totale 9.478