CHINI, Alessandro
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 21.563
AS - Asia 9.761
EU - Europa 8.623
SA - Sud America 1.162
AF - Africa 103
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 14
Totale 41.246
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 21.406
CN - Cina 3.256
GB - Regno Unito 2.921
SG - Singapore 2.688
HK - Hong Kong 1.772
IT - Italia 1.327
SE - Svezia 1.173
BR - Brasile 948
DE - Germania 910
RU - Federazione Russa 482
UA - Ucraina 422
VN - Vietnam 420
TR - Turchia 401
FI - Finlandia 359
KR - Corea 338
FR - Francia 319
IN - India 224
BG - Bulgaria 201
TW - Taiwan 148
JP - Giappone 132
ID - Indonesia 111
NL - Olanda 91
CA - Canada 86
AR - Argentina 76
IE - Irlanda 74
PL - Polonia 65
BE - Belgio 61
BD - Bangladesh 55
ES - Italia 53
ZA - Sudafrica 44
EC - Ecuador 38
LT - Lituania 34
MX - Messico 31
IQ - Iraq 28
AT - Austria 25
CO - Colombia 25
PK - Pakistan 24
IR - Iran 22
CH - Svizzera 21
UZ - Uzbekistan 21
SA - Arabia Saudita 20
PE - Perù 18
MA - Marocco 17
CL - Cile 15
EU - Europa 14
PY - Paraguay 14
RO - Romania 14
VE - Venezuela 14
AE - Emirati Arabi Uniti 13
AU - Australia 12
DK - Danimarca 12
GR - Grecia 12
IL - Israele 9
NP - Nepal 9
PA - Panama 9
KE - Kenya 8
KZ - Kazakistan 8
MY - Malesia 8
BY - Bielorussia 7
JM - Giamaica 7
AL - Albania 6
DO - Repubblica Dominicana 6
DZ - Algeria 6
EG - Egitto 6
JO - Giordania 6
UY - Uruguay 6
BH - Bahrain 5
CZ - Repubblica Ceca 5
PH - Filippine 5
TN - Tunisia 5
A2 - ???statistics.table.value.countryCode.A2??? 4
AM - Armenia 4
AZ - Azerbaigian 4
BO - Bolivia 4
CR - Costa Rica 4
HN - Honduras 4
LA - Repubblica Popolare Democratica del Laos 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
TH - Thailandia 4
BA - Bosnia-Erzegovina 3
KG - Kirghizistan 3
KW - Kuwait 3
LB - Libano 3
LV - Lettonia 3
MK - Macedonia 3
BB - Barbados 2
BN - Brunei Darussalam 2
ET - Etiopia 2
GA - Gabon 2
HU - Ungheria 2
IM - Isola di Man 2
LK - Sri Lanka 2
NG - Nigeria 2
NI - Nicaragua 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
OM - Oman 2
SR - Suriname 2
Totale 41.216
Salva come PNG Salva come JPEG
Città #
Fairfield 2.533
Santa Clara 2.325
Southend 1.965
Hong Kong 1.705
Woodbridge 1.616
Ashburn 1.601
Singapore 1.530
Chandler 1.437
Houston 1.338
Hefei 1.251
Seattle 974
Wilmington 880
Cambridge 835
Jacksonville 817
Ann Arbor 769
Dearborn 673
Nyköping 664
London 537
Beijing 511
Seoul 256
Milan 232
Los Angeles 230
Kent 226
Izmir 210
Council Bluffs 209
Princeton 207
San Diego 200
Sofia 200
Helsinki 195
Chicago 191
Eugene 183
Modena 182
New York 142
Boardman 141
Des Moines 136
Buffalo 128
Ho Chi Minh City 123
Moscow 111
Shanghai 104
The Dalles 100
Jakarta 93
Hanoi 80
Redwood City 80
Padova 79
Dublin 72
Munich 72
São Paulo 72
Grafing 70
Guangzhou 70
Tokyo 59
Frankfurt am Main 56
Dallas 54
Nanjing 53
Salt Lake City 52
Taipei 50
Dong Ket 46
Brussels 45
Rome 45
Bologna 41
Columbus 39
Brooklyn 38
Toronto 37
Bremen 35
Warsaw 35
Redondo Beach 34
Reggio Emilia 33
Norwalk 31
Bengaluru 30
Parma 30
Rio de Janeiro 29
Changsha 28
Hsinchu 27
Jinan 27
Stockholm 27
Leawood 26
Turin 26
Chennai 25
Duncan 25
Johannesburg 25
Nürnberg 25
Paris 24
Atlanta 23
Denver 23
Elk Grove Village 23
Boston 22
Haiphong 22
Wuhan 22
Ankara 21
Falkenstein 21
Kilburn 21
Kunming 21
Amsterdam 20
Montreal 20
Tampa 20
Verona 20
Curitiba 19
Tashkent 19
Da Nang 18
Falls Church 18
Las Rozas de Madrid 18
Totale 29.903
Salva come PNG Salva come JPEG
Nome #
p-GaN/AlGaN/GaN Enhancement-Mode HEMTs 571
GaN-based power devices: Physics, reliability, and perspectives 487
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 374
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers 300
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 299
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 293
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 292
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 286
Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs 286
Analytical Model for Power Switching GaN-Based HEMT Design 285
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 285
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues 282
The Italian perspectives on the application of GaN technology in future SAR and RADAR systems 282
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 276
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 272
False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs 271
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) 270
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 269
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs 267
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 265
Parasitic effects and long term stability of InP-based HEMTs 260
2.1 A/mm current density AlGaN/GaN HEMT 258
N-polar GaN/AlGaN/GaN high electron mobility transistors 258
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 258
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 258
A novel GaN HEMT degradation mechanism observed during HTST test 257
Unpassivated GaN/AlGaN/GaN Power High Electron Mobility Transistors with Dispersion Controlled by Epitaxial Layer Design 256
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates 254
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs 254
TCAD optimization of field-plated InAlAs-InGaAs HEMTs 254
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs 252
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 252
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 251
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 251
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs 250
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 250
Trapping and High Field Related Issues in GaN Power HEMTs 250
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 249
Optimization of 0.25µm GaN HEMTs through numerical simulations 249
Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs 248
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 248
Field plate related reliability improvements in GaN-on-Si HEMTs 248
P-GaN/AlGaN/GaN high electron mobility transistors 248
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 247
Study of GaN HEMTs electrical degradation by means of numerical simulations 247
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 247
Characterization of GaN-based metal--semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies 246
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 246
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 245
Experimental and Numerical Evaluation of RON Degradation in GaN HEMTs during Pulse-Mode Operation 242
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 242
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 241
Influence of device self-heating on trap activation energy extraction 239
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 239
Traps localization and analysis in GaN HEMTs 238
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 238
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation 237
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 237
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz 236
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 236
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 235
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 233
Micro-power photovoltaic harvester based on a frequency-to-voltage MPPT tracker 232
Reliability aspects of GaN-HEMTs on composite substrates 231
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 230
Insights into the off-state breakdown mechanisms in power GaN HEMTs 229
Physical investigation of high-field degradation mechanisms in GaN/AlGaN/GaN hemts 227
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures 227
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 226
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 226
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 226
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology 225
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode 224
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors 222
Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation 222
Reliability issues of Gallium Nitride High Electron Mobility Transistors 222
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 221
Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs 219
Power and linearity characteristics of GaN MISFETs on sapphire substrate 217
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures 216
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology 215
Boost-converter-based solar harvester for low power applications 213
N-polar GaN epitaxy and high electron mobility transistors 213
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 211
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 210
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 209
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 209
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 209
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 208
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs 208
High-linearity class B power amplifiers in GaN HEMT technology 205
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 204
Trap characterization in buried-gate n-channel 6H-SiC JFETs 203
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 202
Design of field-plated InP-based HEMTs 201
A new field-plated GaN HEMT structure with improved power and noise performance 201
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 201
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 201
Diagnosis of trapping phenomena in GaN MESFETs 200
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 199
Totale 24.760
Salva come PNG Salva come JPEG
Categoria #
all - tutte 156.843
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 156.843
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.184 0 0 0 0 0 446 503 528 234 771 290 412
2021/20223.873 151 564 389 160 119 261 210 153 353 308 784 421
2022/20233.908 419 427 310 322 432 637 59 440 516 47 164 135
2023/20242.710 120 190 170 340 611 109 124 477 101 85 67 316
2024/20259.433 439 123 105 618 1.606 1.228 573 664 972 317 1.189 1.599
2025/20266.277 784 970 1.244 1.201 1.632 446 0 0 0 0 0 0
Totale 41.716