TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 9.590
EU - Europa 3.996
AS - Asia 2.951
SA - Sud America 270
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 5
Totale 16.846
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Nazione #
US - Stati Uniti d'America 9.548
GB - Regno Unito 2.415
CN - Cina 1.049
SG - Singapore 986
SE - Svezia 413
HK - Hong Kong 410
DE - Germania 314
BR - Brasile 237
IT - Italia 188
UA - Ucraina 185
RU - Federazione Russa 149
TR - Turchia 143
VN - Vietnam 120
KR - Corea 112
FI - Finlandia 109
BG - Bulgaria 74
FR - Francia 59
IN - India 21
CA - Canada 18
BE - Belgio 17
AR - Argentina 16
BD - Bangladesh 14
JP - Giappone 14
NL - Olanda 13
TW - Taiwan 13
ID - Indonesia 12
IE - Irlanda 12
MX - Messico 11
ES - Italia 10
CH - Svizzera 9
IQ - Iraq 9
PL - Polonia 9
MY - Malesia 8
ZA - Sudafrica 8
AT - Austria 7
EU - Europa 6
MA - Marocco 6
AE - Emirati Arabi Uniti 5
CO - Colombia 5
UZ - Uzbekistan 5
DO - Repubblica Dominicana 4
AU - Australia 3
EG - Egitto 3
GE - Georgia 3
IL - Israele 3
LT - Lituania 3
PA - Panama 3
PE - Perù 3
PH - Filippine 3
PK - Pakistan 3
BO - Bolivia 2
DZ - Algeria 2
EC - Ecuador 2
HR - Croazia 2
IR - Iran 2
JM - Giamaica 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LV - Lettonia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PS - Palestinian Territory 2
RS - Serbia 2
SN - Senegal 2
VE - Venezuela 2
BS - Bahamas 1
BY - Bielorussia 1
CL - Cile 1
CY - Cipro 1
DJ - Gibuti 1
DK - Danimarca 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
NP - Nepal 1
PY - Paraguay 1
RO - Romania 1
SA - Arabia Saudita 1
SI - Slovenia 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TN - Tunisia 1
UG - Uganda 1
UY - Uruguay 1
Totale 16.846
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Città #
Southend 2.057
Fairfield 1.256
Ashburn 887
Santa Clara 861
Woodbridge 769
Houston 634
Singapore 597
Chandler 508
Hefei 490
Ann Arbor 488
Seattle 442
Cambridge 439
Wilmington 437
Jacksonville 433
Hong Kong 405
Dearborn 285
Nyköping 221
Los Angeles 181
London 167
Buffalo 135
Beijing 117
Seoul 106
Council Bluffs 96
San Diego 90
Izmir 77
Des Moines 76
Princeton 75
Sofia 73
The Dalles 72
Eugene 69
Bremen 59
Chicago 57
Modena 53
Grafing 51
Ho Chi Minh City 45
Philadelphia 45
Munich 33
New York 33
Helsinki 32
Moscow 32
Redwood City 27
Columbus 26
Milan 25
São Paulo 24
Shanghai 23
Hanoi 22
Kent 19
Falls Church 17
Auburn Hills 16
Salt Lake City 16
Brussels 15
Orem 15
Tampa 15
Guangzhou 14
Nanjing 14
Boardman 13
Taipei 13
Norwalk 12
Dublin 11
Rio de Janeiro 10
Verona 10
Atlanta 9
Dallas 9
Denver 9
Elk Grove Village 9
Hounslow 9
Phoenix 9
San Mateo 9
Belo Horizonte 8
Brooklyn 8
Kunming 8
Montreal 8
Naples 8
Padova 8
Tokyo 8
Turku 8
Da Nang 7
Haiphong 7
Indiana 7
Kilburn 7
Frankfurt am Main 6
Jakarta 6
Jinan 6
Lancaster 6
Ribeirão Preto 6
Stockholm 6
Warsaw 6
Bologna 5
Brasília 5
Minneapolis 5
Reutlingen 5
San Francisco 5
Sterling 5
Tashkent 5
Ankara 4
Baghdad 4
Bomporto 4
Boston 4
Campinas 4
Charlotte 4
Totale 13.596
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 359
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 335
Vacancy-gettering in silicon: Cavities and helium-implantation 330
Thermal desorption spectra from cavities in helium-implanted silicon 311
Helium-implanted silicon: A study of bubble precursors 303
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 294
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 290
Visible luminescence from silicon by hydrogen implantation and annealing treatments 288
Bandgap widening in quantum sieves 283
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 280
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 278
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 276
A fast technique for the quantitative analysis of channeling RBS spectra 274
Transmission electron microscopy study of helium implanted silicon 274
Helium in silicon: Thermal-desorption investigation of bubble precursors 274
Damage evolution in helium-hydrogen co-implanted (100) silicon 272
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 271
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 269
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 265
Hydrogen and helium bubbles in silicon 265
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 264
High-dose helium-implanted single-crystal silicon: Annealing behavior 263
Hydrogen determination in Si-rich oxide thin films 262
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 261
Copper–titanium thin film interaction 258
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 257
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 256
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 256
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 255
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 253
DLTS and EPR study of defects in H implanted silicon 251
Infrared light emission due to radiation damage in crystalline silicon 250
Processing high-quality silicon for microstrip detectors 248
Transmission Electron Microscopy study of Helium Implanted Silicon 246
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 246
Hydrogen precipitation in highly oversaturated single-crystalline silicon 245
Visible photoluminescence from He‐implanted silicon 245
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 243
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 241
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 241
Structural properties of reactively sputtered W-Si-N thin films 241
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 239
Photoluminescence characterization of SiGe QW grown by MBE 238
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 237
Phase formations in Co-Silicon system 237
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 236
Radiation enhanced transport of hydrogen in SiO2 236
Using evidence from nanocavities to assess the vibrational properties of external surfaces 234
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 232
Early stages of bubble formation in helium-implated (100) silicon 227
Hydrogen injection and retention in nanocavities of single-crystalline silicon 223
GISAXS Study of Hydrogen Implanted Silicon 220
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 218
X-ray reflectivity study of hydrogen implanted silicon 216
GISAXS study of structural relaxation in amorphous silicon 216
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 215
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 215
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 214
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 213
Visible light emission from silicon implanted and annealed SiO2 layers 212
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 198
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 198
EPR study of He-implanted Si 195
GISAXS study of defects in He implanted silicon 194
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 186
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 178
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 174
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 128
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 55
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 52
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 16.910
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Categoria #
all - tutte 65.178
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.178
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.516 0 0 0 0 0 297 180 210 87 411 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20262.366 285 266 609 429 550 227 0 0 0 0 0 0
Totale 16.910