statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	1.800
SG - Singapore	280
GB - Regno Unito	235
CN - Cina	227
BR - Brasile	107
SE - Svezia	93
HK - Hong Kong	84
DE - Germania	49
IT - Italia	44
UA - Ucraina	39
TR - Turchia	37
RU - Federazione Russa	32
VN - Vietnam	30
FI - Finlandia	21
FR - Francia	19
BG - Bulgaria	17
KR - Corea	17
IN - India	11
BD - Bangladesh	6
CA - Canada	6
RO - Romania	6
AR - Argentina	5
IE - Irlanda	5
MX - Messico	5
PL - Polonia	5
EC - Ecuador	4
JP - Giappone	4
BE - Belgio	3
EG - Egitto	3
ID - Indonesia	3
IR - Iran	3
NL - Olanda	3
AT - Austria	2
BZ - Belize	2
ES - Italia	2
LK - Sri Lanka	2
MA - Marocco	2
MY - Malesia	2
PK - Pakistan	2
PS - Palestinian Territory	2
SY - Repubblica araba siriana	2
UZ - Uzbekistan	2
AE - Emirati Arabi Uniti	1
AO - Angola	1
AU - Australia	1
AZ - Azerbaigian	1
CL - Cile	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
HN - Honduras	1
IL - Israele	1
JM - Giamaica	1
KE - Kenya	1
KZ - Kazakistan	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LV - Lettonia	1
MN - Mongolia	1
NO - Norvegia	1
OM - Oman	1
PA - Panama	1
PE - Perù	1
SR - Suriname	1
TN - Tunisia	1
ZA - Sudafrica	1
Totale	3.246

Nome	#
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface	326
Step energy and step interactions on the reconstructed GaAs(001) surface	269
Monte Carlo simulation of electron transport in Si/SiO2 superlattices	263
Structural stability of clean GaAs nanowires grown along the [111] direction	254
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)	254
Semiclassical and quantum transport in Si/SiO2 superlattices	245
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001)	244
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires	240
Effects of wetting layer structure on surface phase stability and on indium surface diffusion	238
Monte Carlo analysis of electron heating in Si/SiO2 superlattices	215
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition	199
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots	194
Monte Carlo simulation of electron transport in Si/SiO2 superlattices: vertical transport enhanced by a parallel field	162
Erratum: Step energy and step interactions on the reconstructed GaAs(001) surface (Physical Review B - Condensed Matter and Materials Physics (2014) 90 (115314) DOI: 10.1103/PhysRevB.90.115314)	156
Totale	3.259

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	264	0	0	0	0	0	66	23	48	20	29	61	17
2021/2022	298	1	44	41	19	6	11	22	13	30	18	59	34
2022/2023	286	35	30	27	20	38	42	3	35	36	0	12	8
2023/2024	137	6	12	6	19	42	5	13	19	10	0	0	5
2024/2025	668	23	5	2	45	142	90	71	62	77	12	57	82
2025/2026	514	47	61	73	107	191	35	0	0	0	0	0	0
Totale													3.259