ZAGNI, NICOLO'
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.359
AS - Asia 3.127
EU - Europa 2.611
SA - Sud America 363
AF - Africa 33
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 6
Totale 11.506
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.295
CN - Cina 993
SG - Singapore 976
IT - Italia 853
GB - Regno Unito 536
HK - Hong Kong 464
SE - Svezia 314
BR - Brasile 302
DE - Germania 254
KR - Corea 213
VN - Vietnam 133
FR - Francia 132
RU - Federazione Russa 114
FI - Finlandia 83
IN - India 81
NL - Olanda 66
TW - Taiwan 61
ID - Indonesia 59
BG - Bulgaria 41
CA - Canada 40
JP - Giappone 40
UA - Ucraina 34
IE - Irlanda 32
TR - Turchia 29
ES - Italia 24
AR - Argentina 21
AT - Austria 19
PL - Polonia 19
MX - Messico 15
BE - Belgio 14
PT - Portogallo 14
EC - Ecuador 13
GR - Grecia 13
LT - Lituania 13
BD - Bangladesh 12
CH - Svizzera 11
SA - Arabia Saudita 11
ZA - Sudafrica 11
IQ - Iraq 10
CO - Colombia 9
UZ - Uzbekistan 7
AU - Australia 6
DZ - Algeria 6
RO - Romania 6
AE - Emirati Arabi Uniti 5
DK - Danimarca 5
MY - Malesia 5
PE - Perù 5
VE - Venezuela 5
MA - Marocco 4
PK - Pakistan 4
PY - Paraguay 4
CL - Cile 3
EG - Egitto 3
EU - Europa 3
IR - Iran 3
JO - Giordania 3
LU - Lussemburgo 3
PH - Filippine 3
RS - Serbia 3
SN - Senegal 3
TH - Thailandia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
CR - Costa Rica 2
DO - Repubblica Dominicana 2
HN - Honduras 2
JM - Giamaica 2
KW - Kuwait 2
KZ - Kazakistan 2
MK - Macedonia 2
TN - Tunisia 2
AL - Albania 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
CZ - Repubblica Ceca 1
HR - Croazia 1
HU - Ungheria 1
KE - Kenya 1
KY - Cayman, isole 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 11.506
Salva come PNG Salva come JPEG
Città #
Fairfield 663
Singapore 655
Santa Clara 645
Ashburn 486
Hefei 438
Hong Kong 436
Chandler 343
Houston 276
Woodbridge 276
Southend 263
Seattle 239
Cambridge 215
Nyköping 210
Wilmington 178
London 177
Modena 143
Milan 128
Beijing 111
Chicago 110
Seoul 106
Ann Arbor 95
Los Angeles 93
San Diego 90
Helsinki 66
Dearborn 65
Boardman 55
Council Bluffs 54
New York 53
Ho Chi Minh City 50
Jakarta 49
Jacksonville 48
The Dalles 44
Princeton 43
Buffalo 41
Redwood City 41
Sofia 39
Bologna 37
Moscow 37
Padova 37
Grafing 36
Kent 35
Bremen 34
Dallas 34
Taipei 32
East Aurora 30
São Paulo 30
Guangzhou 29
Hanoi 29
Tokyo 27
Shanghai 26
Munich 25
Reggio Emilia 25
Falkenstein 23
Frankfurt am Main 23
Salt Lake City 22
Dublin 21
Izmir 21
Parma 21
Rome 19
Brooklyn 18
Eugene 18
San Jose 18
Redondo Beach 17
Warsaw 17
Dresden 16
Montreal 16
Denver 15
Formigine 15
Hsinchu 14
Amsterdam 13
Cheonan 13
Columbus 13
Lappeenranta 13
Bengaluru 12
Chennai 12
Mapo-gu 12
Nuremberg 12
Elk Grove Village 11
Manchester 11
Reggio Nell'emilia 11
Toronto 11
Gangnam-gu 10
Paris 10
Rio de Janeiro 10
Shenzhen 10
Atlanta 9
Piacenza 9
Yuseong-gu 9
Zurich 9
Des Moines 8
Novellara 8
Ravenna 8
Songpa-gu 8
Turin 8
Vienna 8
Bari 7
Buk-gu 7
Delft 7
Duncan 7
Kilburn 7
Totale 8.144
Salva come PNG Salva come JPEG
Nome #
GaN-based power devices: Physics, reliability, and perspectives 487
The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic On-Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates 374
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design 344
The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs 328
Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs 327
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges 321
Effects of Border Traps on Transfer Curve Hysteresis and Split-CV Mobility Measurement in InGaAs Quantum-Well MOSFETs 308
On the impact of channel compositional variations on total threshold voltage variability in nanoscale InGaAs MOSFETs 296
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 289
Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design 273
Random dopant fluctuation variability in scaled InGaAs dual-gate ultra-thin body MOSFETs: source and drain doping effect 272
Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs 257
Variability and sensitivity to process parameters variations in InGaAs Dual-Gate Ultra-Thin Body MOSFETS: A scaling perspective 255
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 252
A memory window expression to evaluate the endurance of ferroelectric FETs 252
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs 248
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 247
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 247
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs 244
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 239
Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model 238
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 238
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 236
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon‐Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs 233
Insights into the off-state breakdown mechanisms in power GaN HEMTs 229
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-Of-The-Roadmap III-V MOSFETs 229
Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors 212
Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity 209
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 209
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs 201
Metodi di Simulazione e Modellizazione per Predirre le Performance e l'Affidabilità dell'Elettronica del XXI Secolo 199
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 193
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 182
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry 177
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 155
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 142
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 141
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 139
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 138
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al$_{\text{2}}$O$_{\text{3}}$/GaN MOS Capacitors 136
Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective 127
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors 125
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 118
Modelling and Simulation of ON-Resistance Instability due to Gate Bias in p-GaN Power HEMTs 115
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 112
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 112
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm AlGaN/GaN HEMTs for Power RF Applications 112
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs 110
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 108
Negative Capacitors and Applications 107
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 107
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach 104
Symmetrical VTH/RONDrifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs 98
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications 96
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 94
From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited) 80
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 72
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 72
Physical Modelling of Charge Trapping Effects 71
Physics of Phase Transition Switches 59
Totale 11.695
Salva come PNG Salva come JPEG
Categoria #
all - tutte 50.011
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.011
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.196 0 0 0 0 0 137 181 132 161 187 131 267
2021/20221.261 110 100 58 41 113 207 55 37 114 88 251 87
2022/20231.140 126 136 78 81 144 133 45 133 129 15 75 45
2023/2024919 63 47 52 101 160 71 60 85 32 55 31 162
2024/20253.034 180 44 36 207 472 423 213 205 264 144 452 394
2025/20262.571 426 357 343 513 750 182 0 0 0 0 0 0
Totale 11.695