OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 10.378
EU - Europa 4.578
AS - Asia 3.547
SA - Sud America 323
AF - Africa 38
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 6
Totale 18.878
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Nazione #
US - Stati Uniti d'America 10.259
GB - Regno Unito 2.591
CN - Cina 1.294
SG - Singapore 1.156
HK - Hong Kong 497
SE - Svezia 481
DE - Germania 446
BR - Brasile 276
IT - Italia 220
UA - Ucraina 220
RU - Federazione Russa 187
TR - Turchia 165
VN - Vietnam 142
KR - Corea 136
FI - Finlandia 132
BG - Bulgaria 88
CA - Canada 87
FR - Francia 74
IN - India 26
BD - Bangladesh 24
NL - Olanda 23
AR - Argentina 22
ID - Indonesia 18
JP - Giappone 18
MX - Messico 17
BE - Belgio 15
IE - Irlanda 15
CH - Svizzera 14
ES - Italia 14
PL - Polonia 13
HR - Croazia 11
ZA - Sudafrica 11
IQ - Iraq 10
TW - Taiwan 10
AT - Austria 9
EU - Europa 8
MA - Marocco 8
AE - Emirati Arabi Uniti 6
CO - Colombia 6
KE - Kenya 5
LT - Lituania 5
MY - Malesia 5
AU - Australia 4
CL - Cile 4
DZ - Algeria 4
PA - Panama 4
PE - Perù 4
RO - Romania 4
UZ - Uzbekistan 4
BO - Bolivia 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
EC - Ecuador 3
EG - Egitto 3
GE - Georgia 3
JM - Giamaica 3
KZ - Kazakistan 3
LV - Lettonia 3
PH - Filippine 3
SA - Arabia Saudita 3
SN - Senegal 3
VE - Venezuela 3
CY - Cipro 2
DK - Danimarca 2
HN - Honduras 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
PS - Palestinian Territory 2
RS - Serbia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
DJ - Gibuti 1
EE - Estonia 1
GT - Guatemala 1
HU - Ungheria 1
KH - Cambogia 1
NG - Nigeria 1
PT - Portogallo 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UG - Uganda 1
UY - Uruguay 1
Totale 18.878
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Città #
Southend 2.166
Fairfield 1.239
Santa Clara 1.043
Ashburn 908
Woodbridge 802
Singapore 723
Houston 664
Chandler 593
Hefei 587
Jacksonville 517
Hong Kong 492
Ann Arbor 460
Seattle 444
Wilmington 433
Cambridge 418
Dearborn 317
Nyköping 264
London 202
Los Angeles 190
Beijing 148
Buffalo 132
Seoul 128
Council Bluffs 105
San Diego 102
Des Moines 94
The Dalles 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Modena 61
Montréal 61
Chicago 51
Ho Chi Minh City 50
Helsinki 44
New York 44
Moscow 42
Mcallen 40
Philadelphia 37
Redwood City 32
Columbus 29
Hanoi 28
Milan 28
São Paulo 27
Shanghai 24
Salt Lake City 20
Auburn Hills 19
Kent 18
Guangzhou 16
Norwalk 16
Tampa 16
Frankfurt am Main 15
Nanjing 15
Boardman 14
Dublin 14
Tokyo 14
Brussels 13
Dallas 13
Verona 13
Montreal 12
Orem 12
Jinan 11
Atlanta 10
Belo Horizonte 10
Brooklyn 10
Elk Grove Village 10
Jakarta 10
Taipei 10
Turku 10
Bologna 9
Boston 9
Falls Church 9
Hounslow 9
Kunming 9
Warsaw 9
Campinas 8
Da Nang 8
Denver 8
Kilburn 8
Padova 8
Indiana 7
Lancaster 7
Phoenix 7
Rio de Janeiro 7
San Francisco 7
San Mateo 7
Vienna 7
Charlotte 6
Chengdu 6
Chennai 6
Haiphong 6
Mexico City 6
Miami 6
Nanchang 6
Stockholm 6
Xiamen 6
Amsterdam 5
Totale 14.965
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 423
Evolution of defect profiles in He-implanted silicon studied by slow positrons 357
Thermal desorption spectra from cavities in helium-implanted silicon 310
Helium-implanted silicon: A study of bubble precursors 302
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 291
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 289
Visible luminescence from silicon by hydrogen implantation and annealing treatments 288
Bandgap widening in quantum sieves 283
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 277
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 276
A fast technique for the quantitative analysis of channeling RBS spectra 274
Helium in silicon: Thermal-desorption investigation of bubble precursors 274
Transmission electron microscopy study of helium implanted silicon 273
Dilute NiPt alloy interactions with Si 273
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 270
Damage evolution in helium-hydrogen co-implanted (100) silicon 268
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 267
Hydrogen and helium bubbles in silicon 264
High-dose helium-implanted single-crystal silicon: Annealing behavior 263
Hydrogen determination in Si-rich oxide thin films 262
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 260
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 259
Copper–titanium thin film interaction 257
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 256
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 256
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 255
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 255
DLTS and EPR study of defects in H implanted silicon 250
Processing high-quality silicon for microstrip detectors 248
Infrared light emission due to radiation damage in crystalline silicon 247
Transmission Electron Microscopy study of Helium Implanted Silicon 245
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 245
Hydrogen precipitation in highly oversaturated single-crystalline silicon 244
Visible photoluminescence from He‐implanted silicon 244
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 241
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 241
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 238
Electronic properties of Silicon - transition metal interface compounds 237
Phase formations in Co-Silicon system 236
Radiation enhanced transport of hydrogen in SiO2 236
Using evidence from nanocavities to assess the vibrational properties of external surfaces 234
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 233
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 231
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 230
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 227
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 223
Hydrogen injection and retention in nanocavities of single-crystalline silicon 223
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 218
X-ray reflectivity study of hydrogen implanted silicon 216
Low temperature dopant activation of BF2 implanted silicon 216
GISAXS study of structural relaxation in amorphous silicon 216
Characterization of Bioacceptable Carbon Materials 216
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 215
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 214
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 214
Visible light emission from silicon implanted and annealed SiO2 layers 212
ION MIXING IN SI/GE LAYERED STRUCTURES 206
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 200
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 199
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 198
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 198
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 198
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 196
A simple on-line system employed in diffraction experiments 195
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 195
GISAXS study of defects in He implanted silicon 194
EPR study of He-implanted Si 194
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 186
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 186
Physics and Art: introducing light-matter interaction by looking at famous paintings 173
A Problem for educational research: The updating of the curriculum 171
Understand Time Resolved Reflectivity by simple experiments 165
Interdiffusion of thin chromium and gold films deposited on silicon 151
Materials science and optics in the arts: case studies to improve physics education 149
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 145
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 143
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 139
Process of manufacturing wafers usable in the semiconductor industry 133
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 131
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 130
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 128
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 128
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 123
High-resolution X-ray diffraction of silicon-on-nothing 72
Initial reactions in Ti-Si(Mo) bilayers 41
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 18.955
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Categoria #
all - tutte 73.069
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 73.069
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.475 0 0 0 0 0 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20262.729 340 308 691 516 702 172 0 0 0 0 0 0
Totale 18.958